The thupi kaphatikizidwe ndondomeko zinki selenide makamaka zikuphatikizapo njira luso zotsatirazi ndi magawo mwatsatanetsatane

Nkhani

The thupi kaphatikizidwe ndondomeko zinki selenide makamaka zikuphatikizapo njira luso zotsatirazi ndi magawo mwatsatanetsatane

1. Solvothermal synthesis

1. Yaiwisichiŵerengero cha zinthupa
Zinc ufa ndi selenium ufa zimasakanizidwa pa 1: 1 molar chiŵerengero, ndi deionized madzi kapena ethylene glycol anawonjezera monga zosungunulira sing'anga 35..

2 .Zomwe zimachitika

o Kutentha kochita: 180-220 ° C

o Nthawi yochitira: 12-24 hours

o Kupanikizika: Pitirizani kupanikizika kodzipangira nokha mu ketulo yotsekedwa
Kuphatikiza kwachindunji kwa zinki ndi selenium kumathandizidwa ndi kutentha kuti apange makhiristo a nanoscale zinc selenide 35..

3.Ndondomeko ya pambuyo pa chithandizopa
Zitachitika izi, idayikidwa pakati, kutsukidwa ndi ammonia (80 ° C), methanol, ndi vacuum zouma (120 ° C, P₂O₅).Btainufa > 99.9% chiyero 13.


2. Njira yoyika mpweya wa mankhwala

1.Kukonzekera kwazinthu zopangira

o Kuyera kwa zinc zopangira ndi ≥ 99.99% ndikuyikidwa mu graphite crucible

o Mpweya wa hydrogen selenide umatengedwa ndi argon gas carry6.

2 .Kuwongolera kutentha

o Zinc evaporation zone: 850-900°C

o Malo oyika: 450-500°C
Kuyika molunjika kwa mpweya wa zinki ndi hydrogen selenide ndi kutentha kwa gradient 6.

3 .Gasi magawo

o Kuthamanga kwa Argon: 5-10 L / min

o Kupanikizika pang'ono kwa hydrogen selenide:0.1-0.3 pa
Kuyika mitengo kumatha kufika 0.5-1.2 mm/h, zomwe zimapangitsa mapangidwe a 60-100 mm wandiweyani wa polycrystalline zinki selenide 6..


3. Njira yokhazikika yokhazikika yokhazikika

1. Yaiwisikusamalira zinthupa
Njira yothetsera zinc chloride idakhudzidwa ndi njira ya oxalic acid kuti ipange nthaka ya zinc oxalate precipitate, yomwe idawuma ndikuyika pansi ndikusakanizidwa ndi ufa wa selenium pa chiŵerengero cha 1: 1.05 molar 4.

2 .Thermal reaction magawo

o Vacuum chubu ng'anjo kutentha: 600-650°C

o Sungani nthawi yofunda: maola 4-6
Zinc selenide ufa wokhala ndi tinthu ting'onoting'ono 2-10 μm amapangidwa ndi mawonekedwe olimba agawo 4..


Kuyerekeza njira zazikuluzikulu

njira

Kujambula kwa zinthu

Tinthu kukula/makulidwe

Crystallinity

Minda yofunsira

Njira ya Solvothermal 35

Nanoballs / ndodo

20-100 nm

Cubic sphalerite

Zida za Optoelectronic

Kutulutsa mpweya 6

Zojambula za polycrystalline

60-100 mm

Kapangidwe ka hexagonal

Ma infrared optics

Njira yokhazikika 4

Micron-kakulidwe ufa

2-10 mm

Gawo la cubic

Ma infrared material precursors

Mfundo zazikuluzikulu za kayendetsedwe kapadera: njira ya solvothermal iyenera kuwonjezera zowonjezera monga oleic acid kuti ziwongolere morphology 5, ndipo kuyika kwa nthunzi kumafuna kuti gawo lapansi likhale lovuta kukhala .

 

 

 

 

 

1. Kuyika kwa nthunzi (PVD).

1 .Technology Njira

o Zinc selenide zopangira zimatenthedwa m'malo opanda vacuum ndikuyikidwa pamalo apansi panthaka pogwiritsa ntchito ukadaulo wa sputtering kapena matenthedwe amadzimadzi12.

o Magwero a zinki ndi selenium amatenthedwa ndi kutentha kosiyanasiyana (zinc evaporation zone: 800-850 °C, selenium evaporation zone: 450-500 °C), ndipo chiŵerengero cha stoichiometric chimayendetsedwa ndi kuwongolera kuchuluka kwa evaporation.pa12 .

2 .Parameter control

o Vacuum: ≤1×10⁻³ Pa

o Basal kutentha: 200–400°C

o Mlingo wa malo:0.2–1.0 nm/s
Makanema a Zinc selenide okhala ndi makulidwe a 50-500 nm amatha kukonzedwa kuti agwiritsidwe ntchito mu infuraredi Optics 25..


2. Njira yamakina yogaya mpira

1.Kusamalira zopangira

o Zinc ufa (kuyera≥99.9%) umasakanizidwa ndi selenium ufa pa 1: 1 molar chiŵerengero ndi kulowetsedwa mu zitsulo zosapanga dzimbiri mphero mtsuko 23.

2 .Njira magawo

o Mpira akupera nthawi: 10-20 maola

Liwiro: 300-500 rpm

o Pellet ratio: 10: 1 (zirconia akupera mipira).
Zinc selenide nanoparticles ndi tinthu kukula 50-200 nm anali kwaiye ndi makina alloying zimachitikira, ndi chiyero cha > 99% 23.


3. Hot kukanikiza sintering njira

1 .Kukonzekera koyambirira

o Zinc selenide nanopowder (tinthu kukula <100 nm) synthesized ndi solvothermal njira monga zopangira 4.

2 .Sintering magawo

o Kutentha: 800–1000°C

o Kupanikizika: 30–50 MPa

o Khalani otentha: maola 2-4
Chogulitsacho chili ndi kachulukidwe > 98% ndipo chimatha kusinthidwa kukhala zigawo zazikulu zowoneka bwino monga mawindo a infuraredi kapena magalasi 45..


4. Molecular beam epitaxy (MBE).

1.Malo a vacuum apamwamba kwambiri

o Vacuum: ≤1×10⁻⁷ Pa

o Zinc ndi selenium ma molekyulu a ma molekyulu amawongolera ndendende kutuluka kwa gwero la evaporation la elekitironi6.

2.Kukula magawo

o Kutentha kwapansi: 300-500 ° C (GaAs kapena safiro gawo la safiro amagwiritsidwa ntchito kawirikawiri).

o Mlingo wa kukula:0.1–0.5 nm/s
Makanema a single-crystal zinc selenide woonda amatha kukonzedwa mu makulidwe a 0.1-5 μm pazida zotsogola kwambiri za optoelectronic56.

 


Nthawi yotumiza: Apr-23-2025